Room temperature 633nm tapered diode lasers with external wavelength stabilisation

IET Optoelectronics

Volumn 3, Issue 6, 2009, Pages 320-325

  Blume, G ^a   Fiebig, C ^a   Feise, D ^a   Kaspari, C ^a   Sahm, A ^a   Paschke, K ^a   Erbert, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINP; CONTINUOUS WAVE; EXTERNAL CAVITY; GAAS; GAIN MEDIUM; HE-NE LASERS; METAL-ORGANIC; OUTPUT POWER; REAR SIDE; ROOM TEMPERATURE; SPECTRAL WIDTHS; STABILISATION; TAPERED DIODE LASERS; TAPERED LASERS; VAPOUR-PHASE; VOLUME BRAGG GRATINGS;

CRYSTAL GROWTH; LASER APPLICATIONS;

CONTINUOUS WAVE LASERS;

EID: 72149131200     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt.2009.0042     Document Type: Conference Paper

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