Twin-contact 645-nm tapered laser with 500-mW output power

IEEE Photonics Technology Letters

Volumn 21, Issue 4, 2009, Pages 236-238

  Adamiec, Pawel ^a   Sumpf, Bernd ^a   Feise, David ^a   Hasler, Karl Heinz ^a   Ressel, Peter ^a   Wenzel, Hans ^a   Zorn, Martin ^a   Weyers, Markus ^a   Erbert, Götz ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

High brightness lasers; Laser display applications; Optical beams; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE OPERATION; DIFFRACTION-LIMITED BEAMS; HIGH BRIGHTNESS; HIGH-BRIGHTNESS LASERS; INPUT CURRENT; LASER DISPLAY; MODULATION EFFICIENCY; MW OUTPUT; OPTICAL BEAMS; TAPER ANGLES; TAPERED LASERS; TWIN-CONTACT;

LASERS;

SEMICONDUCTOR LASERS;

EID: 72149108534     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2010509     Document Type: Article

References (12)

1. G. Hollemann, B. Braun, P. Heist, J. Symanowski, U. Krause, J. Kraenert, and C. Deter, "High-power laser projection displays," Proc. SPIE, vol.4294, pp. 36-46, 2001.
2. T. Onishi, K. Inoue, K. Onozawa, T. Takayama, and M. Yuri, "High-power and high-temperature operation of Mg-doped Al- GaInP-based red laser diodes," IEEE J. Quantum Electron., vol.40, no.12, pp. 1634-1638, Dec. 2004.
3. B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M.Weyers, and G. Tränkle, "3-W broad area lasers and 12-W bars with conversion efficiencies up to 40% at 650 nm," IEEE J. Sel. Topics Quantum Electron., vol.13, no.5, pp. 1188-1193, Sep./Oct. 2007.
4. B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, and G. Tränkle, "1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm," Proc. SPIE, vol.6876, p. 68760T, 2008.
5. E. Samsoe, N. Kjaergaard, H. Lausen, P. E. Andersen, and P. M. Petersen, "An external-cavity laser diode at 635 nm for laser display application," Opt. Commun., vol.245, no.1-6, pp. 333-339, 2005.
6. B. Pezeshki, M. Hagberg, B. Lu, M. Zeleinski, S. Zou, and E. Kolev, "High power and diffraction-limited red lasers," in Proc. SPIE Conf. In-Plane Semiconductor Lasers IV, 2000, vol.3947, pp. 80-90.
7. N. Linder, R. Butendeich, W. Schmid, S. Tautz, K. Streubel, C. Karnutsch, S. Ruhrländer, H. Schweizer, and F. Scholz, "900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm," in Conf. Lasers and Electro-Optics, San Francisco, CA, 2004.
8. B. Sumpf, P. Adamiec, M. Zorn, P. Froese, J. Fricke, P. Ressel, H. Wenzel, M.Weyers, G. Erbert, and G. Tränkle, "650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW," Proc. SPIE, vol.6876, p. 68760M, 2008.
9. L. Toikkanen, M. Dumitrescu, A. Tukianien, S. Viitala, M. Suominen, V. Erojärvi, V. Rimpilainen, R. Rönkkö, and M. Pessa, "SS-MBE grown short red wavelength range AlGaInP laser structures," Proc. SPIE, vol.5452, pp. 199-205, 2004.
10. P. Ressel, G. Erbert, U. Zeimer, K. Häusler, G. Beister, B. Sumpf, A. Klehr, and G. Tränkle, "Novel passivation process for the mirror facets of high-power semiconductor diode lasers," IEEE Photon. Technol. Lett., vol.17, no.5, pp. 962-964, May 2005.
11. C. H. Kwok, R. V. Penty, I. H. White, K.-H. Hasler, B. Sumpf, and G. Erbert, "High modulation efficiency Gigabits/s modulation of twincontact high brightness tapered DBR laser," IEEE Photon. Technol. Lett., to be published.
12. L. Borruel, H. Odriozola, J. M. G. Tijero, I. Esquivias, S. Sujecki, and E. Larkins, "Design strategies to increase the brightness of gain guide tapered lasers," Opt. Quantum Electron., vol.40, no.2-4, pp. 175-189, Mar. 2008.