Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5175-5177

  Kaspari, Christian ^a   Zorn, Martin ^a   Weyers, Markus ^a   Erbert, Götz ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CRYSTAL GROWTH; DIODES; GROWTH TEMPERATURE; LASERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL OPTIMIZATION; THERMODYNAMIC PROPERTIES; THRESHOLD CURRENT DENSITY; VAPOR PHASE EPITAXY;

A3. METALORGANIC VAPOR PHASE EPITAXY; ACTIVE ZONES; ALGAINP; B2. SEMICONDUCTING III-V MATERIALS; B3. LASER DIODES; DIFFERENTIAL EFFICIENCIES; EMISSION WAVELENGTHS; GROWTH PARAMETERS; LASER DIODES; LASER EMISSIONS; LASER PARAMETERS; LASER PERFORMANCES; PHOTOLUMINESCENCE INTENSITIES; PHYSICAL LIMITS; QUANTUM WELLS; RED LASERS; RED SPECTRAL REGIONS; TEST SAMPLES; THERMAL PROPERTIES; V/III RATIOS;

QUANTUM WELL LASERS;

EID: 56249133303     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.018     Document Type: Article

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