High power 635 nm low-divergence ridge waveguide singlemode lasers

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 272-273

  Lu, B ^a   Osinski, J S ^a   Vail, E ^a   Pezeshki, B ^a   Schmitt, B ^a   Lang, R J ^a  

^a SDL INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER LASERS; LASER BEAM EFFECTS; LASER MODES; OPTICAL DESIGN; OPTICAL WAVEGUIDES;

CATASTROPHIC OPTICAL DAMAGE (COD); SINGLEMODE LASERS;

SEMICONDUCTOR LASERS;

EID: 0032484794     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980223     Document Type: Article

References (6)

1. OSINSKI, J.S., and LU, B.: 'Developments in red lasers for optical data storage'. Paper CMH4, 1997 Conf. Lasers and Electro-Optics, 19 Baltimore, MD, May 1997
2. HIROYAMA, H., NISHIDA, T., UETANI, T., BESSHO, Y., SHONO, M., SAWADA, M., and IBARAKI, A.: 'High-power 630nm-band AlGaInP laser diodes with strained-compensated single quantum well active layer'. 1997 Conf. on Lasers and Electro-Optics, 22 Baltimore, MD, May 1997, Paper CThF1
3. SHIMA, S., TADA, H., ONO, K., FUJIWARA, M., UTAKOUJI, T., KIMURA, T., TAKEMI, M., and HIGUCHI, H.: 'Highly reliable 60°C 50-mW operation of 650-nm band window-mirror laser diodes', IEEE Photonics Technol. Lett., 1997, 9, pp. 413-415
4. WATANABE, M., MATSUURA, H., SHIMADA, N., and OKUDA, H.: 'Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high temperature and reliable operation', IEEE J. Sel. Topics Quantum Electron., 1995, 1, pp. 712-716
5. SUN, D., TREAT, D.W., and BOUR, D.P.: 'High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode', Electron. Lett., 1996, 32, pp. 1488-1490
6. KUHN, J., GENG, C., SCHOLZ, F., and SCHWEIZER, H.: 'Low-threshold GaInP/AlGaInP ridge waveguide lasers', Electron. Lett., 1997, 33, pp. 1707-1708