Low-threshold, highly reliable 630 nm-band AlGaIP visible laser diodes with AlInP buried waveguide

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 894-896

  Kobayashi, R ^a   Hotta, H ^a   Miyasaka, F ^a   Hara, K ^a   Kobayashi, K ^a  

^a NONE

Author keywords

Integrated optics; Optical waveguides; Visible semiconductor lasers

Indexed keywords

CLADDING (COATING); ELECTRIC CURRENTS; FABRICATION; INTEGRATED OPTICS; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

AUTOMATIC POWER CONTROL TEST; OPTICAL CONFINEMENT; RIDGE WAVEGUIDE; THRESHOLD CURRENT; VISIBLE SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 0030576222     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960605     Document Type: Article

References (7)

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