High-power red laser diodes grown by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 667-671

  Zorn, M ^a   Wenzel, H ^a   Zeimer, U ^a   Sumpf, B ^a   Erbert, G ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

HIGH POWER LASERS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS; WAVEGUIDES; ZINC;

CLADDING LAYERS; LASER BARS; LAYER STRUCTURES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR LASERS;

EID: 33846420640     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.109     Document Type: Article

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