메뉴 건너뛰기




Volumn 5452, Issue , 2004, Pages 199-205

SS-MBE grown short red wavelength range AlGaInP laser structures

Author keywords

Edge emitting laser diode; Layer structure optimization; Short red wavelength range

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 12344269065     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.545592     Document Type: Conference Paper
Times cited : (22)

References (15)
  • 1
    • 0031223674 scopus 로고    scopus 로고
    • All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors
    • M. Pessa, M. Toivonen, M. Jalonen, P. Savolainen, and A. Salokatve, "All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors", Thin Solid Films, 306, 237-243, 1997.
    • (1997) Thin Solid Films , vol.306 , pp. 237-243
    • Pessa, M.1    Toivonen, M.2    Jalonen, M.3    Savolainen, P.4    Salokatve, A.5
  • 2
    • 0032070085 scopus 로고    scopus 로고
    • Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers
    • P.Savolainen, M.Toivonen, J.Köngäs, M.Pessa, P.Corvini and M. Jansen, "Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers, Electronics Letters,.34, 11, 1104-1105, 1998
    • (1998) Electronics Letters , vol.34 , Issue.11 , pp. 1104-1105
    • Savolainen, P.1    Toivonen, M.2    Köngäs, J.3    Pessa, M.4    Corvini, P.5    Jansen, M.6
  • 4
    • 0033285572 scopus 로고    scopus 로고
    • Material Issues in AlGaInP red-emitting laser diodes
    • P. Blood, "Material Issues in AlGaInP red-emitting laser diodes", Materials Science and Engineering B66, 174-180, 1999.
    • (1999) Materials Science and Engineering , vol.B66 , pp. 174-180
    • Blood, P.1
  • 5
    • 0026926286 scopus 로고
    • Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier
    • H.Hamada, K.Tominaga, M.Shono, S.Honda, K.Yodoshi and T.Yamaguchi, "Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier", Electronics Letters, 28, 19, 1834-1836, 1992
    • (1992) Electronics Letters , vol.28 , Issue.19 , pp. 1834-1836
    • Hamada, H.1    Tominaga, K.2    Shono, M.3    Honda, S.4    Yodoshi, K.5    Yamaguchi, T.6
  • 8
    • 1942520655 scopus 로고
    • Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers
    • A. Kikuchi, K. Kishino, "Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers", Applied Physics Letters, 60, 1046-1038, 1992.
    • (1992) Applied Physics Letters , vol.60 , pp. 1046-11038
    • Kikuchi, A.1    Kishino, K.2
  • 9
    • 0027904734 scopus 로고
    • Substrate misorientation effects in AlGaInP lasers and crystals grown by gas source molecular beam epitaxy
    • A. Kikuchi and K.Kishino,"Substrate misorientation effects in AlGaInP lasers and crystals grown by gas source molecular beam epitaxy", Journal of Crystal Growth 127, 9-13, 1993
    • (1993) Journal of Crystal Growth , vol.127 , pp. 9-13
    • Kikuchi, A.1    Kishino, K.2
  • 10
    • 0001572694 scopus 로고    scopus 로고
    • Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy
    • M. Jalonen, M. Toivonen, P. Savolainen, J. Köngäs, and M. Pessa, "Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy", Applied Physics Letters, 71, 4, 479-481, 1997.
    • (1997) Applied Physics Letters , vol.71 , Issue.4 , pp. 479-481
    • Jalonen, M.1    Toivonen, M.2    Savolainen, P.3    Köngäs, J.4    Pessa, M.5
  • 14
    • 0022775786 scopus 로고
    • Electron reflectance of multiquantum barrier
    • K. Iga, H. Uenohara, F. Koyoma, "Electron reflectance of multiquantum barrier", Electronics Letters, 22, 19, 1008-1010, 1986
    • (1986) Electronics Letters , vol.22 , Issue.19 , pp. 1008-1010
    • Iga, K.1    Uenohara, H.2    Koyoma, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.