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Volumn 55, Issue 4, 2009, Pages 1496-1500

Effects of the formation temperature of Au + Ga solid-solution droplets on the growth behaviors of GaN nanowires on Si(111) by using MOCVD

Author keywords

Catalyst; GaN; MOCVD; Nanowire; SEM; Solid solution; TEM

Indexed keywords


EID: 72149119748     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.55.1496     Document Type: Article
Times cited : (3)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.