Improvements of the ferroelectric properties of high-valence Tb-doped Bi4Ti3O12 thin film grown by sol-gel method

Materials Letters

Volumn 64, Issue 3, 2010, Pages 364-366

  Pei, Ling ^a   Li, Meiya ^a   Liu, Jun ^a   Yu, Benfang ^a   Wang, Jing ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Fatigue; Ferroelectrics; High valence Tb doping; Sol gel preparation; Thin films

Indexed keywords

ANTI-FATIGUE; APPLIED ELECTRIC FIELD; BISMUTH TITANATE; COERCIVE FIELD; DENSE SURFACE; DIELECTRIC CONSTANTS; FATIGUE; FERROELECTRIC MEASUREMENTS; FERROELECTRIC PROPERTY; LOW CONCENTRATIONS; POLYCRYSTALLINE PEROVSKITE; REMNANT POLARIZATIONS; SI (100) SUBSTRATE; SOL GEL PREPARATIONS; SOL-GEL METHODS; SOL-GEL TECHNIQUE; STRUCTURAL DISTORTIONS; SWITCHABLE POLARIZATION; SWITCHING CYCLES; TB-DOPED;

BISMUTH; DOPING (ADDITIVES); ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRICITY; GELS; OXIDE MINERALS; OXYGEN; OXYGEN VACANCIES; PEROVSKITE; POLARIZATION; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; TERBIUM ALLOYS; THIN FILMS;

FILM PREPARATION;

EID: 72049087992     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.11.017     Document Type: Article

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