Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges

Physica B: Condensed Matter

Volumn 388, Issue 1-2, 2007, Pages 190-194

  Chon, Uong ^a   Jang, Hyun M ^b   Shin, Nam S ^c   Kim, Jae S ^b   Ahn, Do C ^c   Kim, Yun S ^d   No, Kwangsoo ^d  

^a Research Institute of Industrial Science and Technology (RIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c POSTECH   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Fatigue free; Ferroelectric; FRAM; Gadolinium modified bismuth titanate

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; DECOMPOSITION; FAILURE (MECHANICAL); FATIGUE OF MATERIALS; NONVOLATILE STORAGE;

FATIGUE-FREE; GADOLINIUM-MODIFIED BISMUTH TITANATE;

THIN FILMS;

EID: 33751219579     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.05.434     Document Type: Article

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