Defect kinetics and dopant activation in submicrosecond laser thermal processes

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

  Huet, K ^a   Fisicaro, G ^b,c   Venturini, J ^a   Besaucle H ^a   La Magna, A ^c  

^a Excico   (France)

^b UNIVERSITY OF CATANIA   (Italy)

^c CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE REDUCTION; DEFECT DIFFUSION; DEFECT EVOLUTION; DEFECT KINETICS; DOPANT ACTIVATION; EXPERIMENTAL DATA; HEAT DIFFUSIONS; IMPLANTATION DAMAGE; ION IMPLANTED; KINETIC SIMULATION; LASER THERMAL ANNEALING; LASER THERMAL PROCESS; PARTIAL MELTING; PROCESS CONDITION; SUB-MICROSECOND; TIME-SCALES;

LASER HEATING; PHASE TRANSITIONS;

DEFECTS;

EID: 71949118934     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3268472     Document Type: Article

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