Laser annealing of double implanted layers for IGBT Power Devices

16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008

Volumn , Issue , 2008, Pages 177-181

  Sabatier, Clement ^a   Rack, Simon ^a   Beseaucele, Herve ^a   Venturini, Julien ^a   Hoffmann, Thomas Y ^b   Rosseel, Erik ^b   Steenbergen, Johnny ^b  

^a Excico   (France)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; DIFFERENT LAYERS; IMPLANTATION CONDITIONS; IMPLANTED LAYERS; LASER ENERGY DENSITY; LOW THERMAL BUDGET; METALLIC STRUCTURES; THIN SILICON WAFER;

DOPING (ADDITIVES); ELECTRIC EQUIPMENT; EXCIMER LASERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MICROELECTRONICS; OPTICAL WAVEGUIDES; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SILICON;

SILICON WAFERS;

EID: 84879850791     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2008.4690553     Document Type: Conference Paper

References (1)

1. H. Bourdon et al Proceeding of IEEE RTP 2006, Kyoto Oct 2006