Amorphization and graphitization of single-crystal diamond - A transmission electron microscopy study

Diamond and Related Materials

Volumn 18, Issue 11, 2009, Pages 1353-1359

  Hickey, D P ^a   Jones, K S ^a   Elliman, R G ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Amorphization; Diamond; Graphitization; Ion implantation; Single crystal diamond; Transmission electron microscopy (TEM)

Indexed keywords

AMORPHIZATION PROCESS; AMORPHOUS POCKET; BURIED MARKER-LAYERS; CARBON LAYERS; CRITICAL DISPLACEMENT; DEFECT FREE STATE; DIAMOND SUBSTRATES; ELECTRON DIFFRACTION ANALYSIS; MONTE CARLO SIMULATION; ROOM-TEMPERATURE IMPLANTS; SINGLE CRYSTAL DIAMOND; SOLID PHASE EPITAXIAL; TEM;

AMORPHIZATION; AMORPHOUS CARBON; ANNEALING; COMPUTER SIMULATION; DIAMONDS; ELECTRON DIFFRACTION; ELECTRONS; GRAPHITE; GRAPHITIZATION; ION BOMBARDMENT; ION IMPLANTATION; MICROCRYSTALLINE SILICON; MONTE CARLO METHODS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ORIENTATION;

EID: 71849098398     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.08.012     Document Type: Article

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