TEM investigation on micro-inclusions and dislocations in a HPHT-grown diamond single crystal from Ni-C system

Crystal Research and Technology

Volumn 35, Issue 11-12, 2000, Pages 1289-1294

  Yin, Long Wei ^a,c   Zou, Z D ^a   Li, M S ^a   Geng, G L ^a   Sun, D S ^a   Hao, Z Y ^a   Yao, Z Y ^b  

^a SHANDONG UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

^c SHANDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST ACTIVITY; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); INCLUSIONS; NICKEL COMPOUNDS; PRESSURE EFFECTS; SINGLE CRYSTALS; STRESS ANALYSIS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH DEFECTS;

DIAMONDS;

EID: 0034499989     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200011)35:11/12<1289::AID-CRAT1289>3.0.CO;2-W     Document Type: Article

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