Cross-sectional transmission electron microscopy method and studies of implant damage in single crystal diamond

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1302-1307

  Hickey, D P ^a   Kuryliw, E ^a   Siebein, K ^a   Jones, K S ^a   Chodelka, R ^b,c   Elliman, R ^c  

^a University of Florida   (United States)

^b Gemesis Corporation   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL TEM SAMPLE; HIGH-PRESSURE-HIGH-TEMPERATURE DIAMONDS; IN SITU LIFT-OUT;

AMORPHOUS ALLOYS; ANNEALING; CRYSTALLINE MATERIALS; GRAPHITE; GRAPHITIZATION; OPTICAL RESOLVING POWER; SEMICONDUCTING DIAMONDS; TRANSMISSION ELECTRON MICROSCOPY;

SINGLE CRYSTALS;

EID: 33745508390     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2209659     Document Type: Article

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