Insights into effects of annealing on microstructure from SnO2 thin films prepared by pulsed delivery

Journal of Non-Crystalline Solids

Volumn 355, Issue 52-54, 2009, Pages 2647-2652

  Chen, Z W ^a,b   Liu, G ^a   Zhang, H J ^a   Ding, G J ^a   Jiao, Z ^a   Wu, M H ^a   Shek, C H ^b   Wu, C M L ^b   Lai, J K L ^b  

^a SHANGHAI UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Crystal growth; Laser deposition; Microcrystallinity; Nanocrystals; Thin film transistors; X ray diffraction

Indexed keywords

ANNEALING TEMPERATURES; AVERAGE GRAIN SIZE; CLEAN GLASS SUBSTRATES; CRYSTAL PLANES; CRYSTALLINE PROPERTIES; INCREASED TEMPERATURE; LASER DEPOSITIONS; MICRO-STRUCTURAL; MICROCRYSTALLINITY; MORPHOLOGICAL PROPERTIES; OPTIMUM GROWTH CONDITIONS; PHASE FORMATIONS; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; PULSED-LASER DEPOSITION TECHNIQUE; ROOT MEAN SQUARE ROUGHNESS; SCANNING ELECTRONS; SELECTED AREA ELECTRON DIFFRACTION; THIN FILM QUALITY; TIN DIOXIDE THIN FILM;

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; DEPOSITION; DIFFRACTION; FILM GROWTH; GRAIN BOUNDARIES; LASERS; NANOCRYSTALS; PARAMETER ESTIMATION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS; THIN FILMS; TIN; TIN DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

FILM PREPARATION;

EID: 71849094200     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.09.001     Document Type: Article

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