An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 348-353

  Rodriguez, N ^a   Roldan J B ^a   Gamiz F ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COULOMB BLOCKADE; ELECTRON MOBILITY; MONTE CARLO METHODS; POLYSILICON;

ANALYTICAL CALCULATIONS; REMOTE SCATTERING MECHANISMS; ULTRATHIN GATE OXIDE DEVICES;

MOSFET DEVICES;

EID: 34047242246     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/009     Document Type: Article

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