Novel approach to the fabrication of a strain- and crack-free GaN free-standing template: Self-separation assisted by the voids spontaneously formed during the transition in the preferred orientation

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 198-201

  Lee, Hyun Jae ^a   Goto, T ^a   Fujii, K ^a   Yao, T ^a   Kim, Chinkyo ^b   Chang, Jiho ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b Kyung Hee University   (South Korea)

^c Korea Maritime University   (South Korea)

Author keywords

A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

A3. HYDRIDE VAPOR PHASE EPITAXY; CRACK FREE; GAN FILM; HYDRIDE VAPOR PHASE EPITAXY; NOVEL METHODS; PLANE SAPPHIRE; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; SPONTANEOUS FORMATION; SPONTANEOUS TRANSITION; STRAIN-FREE; TRANSITION LAYERS;

CORUNDUM; CRACKS; CRYSTAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEPARATION; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 71649096050     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.038     Document Type: Article

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