SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 10, 2009, Pages

Spontaneous transition in preferred orientation of GaN domains grown on r -plane sapphire substrate from [11 2̄0] to [0001]

(7) Lee, Hyun Jae a Ha, Jun Seok a Goto, T a Yao, T a Kim, Chinkyo b Hong, Soon Ku c Chang, Jiho d

a TOHOKU UNIVERSITY (Japan)

b Kyung Hee University (South Korea)

c Chungnam National University (South Korea)

d Korea Maritime University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; STACKING FAULTS; SUBSTRATES;

ATOMISTIC MODELS; FILM CHARACTERISTICS; GAN FILMS; HYDRIDE VAPOR PHASE EPITAXIES; INVERSION DOMAIN BOUNDARIES; LOW-TEMPERATURE-GROWN GAN; PLANE SAPPHIRES; PREFERRED ORIENTATIONS; SPONTANEOUS TRANSITIONS; SUBSTRATE ORIENTATIONS;

GALLIUM ALLOYS;

EID: 62549162668 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3097009 Document Type: Article

Times cited : (5)

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