Analysis of spatial and energy slow trap profile in HfO2/ SiO2 Metal-oxide-silicon devices by low frequency noise measurements

Fluctuation and Noise Letters

Volumn 8, Issue 2, 2008, Pages

  Zafari, Leily ^a   Jomaah, Jalal ^a   Ghibaudo, Gerard ^a   Faynot, Olivier ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

Fully depleted; HfO2; LF noise; MOSFET; Slow trap; SOI

Indexed keywords

EID: 46349099217     PISSN: 02194775     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219477508004350     Document Type: Article

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