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Volumn 275, Issue 1-2, 2005, Pages
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Defect status near the SiC/substrate interface: Investigation of the first stage of the growth by physical vapour transport
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Author keywords
A1. Characterization; A1. Defects; A1. Interfaces; A1. Substrates; A2. Growth from vapor; A2. Seed crystals
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Indexed keywords
CHARACTERIZATION;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
PHOTOLUMINESCENCE;
RAMAN SPECTROSCOPY;
SINGLE CRYSTALS;
STACKING FAULTS;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
BANDGAP ENERGY;
GROWTH FROM VAPOR;
INTERFACES;
SEED CRYSTALS;
SILICON CARBIDE;
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EID: 15944419500
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.254 Document Type: Conference Paper |
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Times cited : (5)
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References (11)
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