Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of N F3 and O2

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 2, 2007, Pages 391-400

  Tasaka, A ^a   Watanabe, E ^a   Kai, T ^a   Shimizu, W ^a   Kanatani, T ^a   Inaba, M ^a   Tojo, T ^b   Tanaka, M ^c   Abe, T ^d   Ogumi, Z ^d  

^a DOSHISHA UNIVERSITY   (Japan)

^b Toyo Tanso Co Ltd   (Japan)

^c SUMITOMO OSAKA CEMENT CO LTD   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); OPTICAL EMISSION SPECTROSCOPY; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

ETCHING RATE; GAS PLASMA; OXYGEN CONCENTRATION;

SILICON CARBIDE;

EID: 34248583161     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2699473     Document Type: Article

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