Structural and electrical characterization of epitaxial 4H-SiC layers for power electronic device applications

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 298-303

  Scaltrito, L ^a   Porro, S ^a   Cocuzza, M ^a   Giorgis, F ^a   Pirri, C F ^a   Mandracci, P ^a   Ricciardi, C ^a   Ferrero, S ^a   Sgorlon, C ^b   Richieri, G ^b   Merlin, L ^b   Castaldini, A ^c   Cavallini, A ^c   Polenta, L ^c  

^a POLITECNICO DI TORINO   (Italy)

^b IRCI Intl Rectifier Corp Italia   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

DLTS analysis; I V analysis; Micro Raman spectroscopy; Silicon carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC EQUIPMENT MANUFACTURE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY;

ENERGY POSITION;

SILICON CARBIDE;

EID: 0041930954     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00726-2     Document Type: Conference Paper

References (9)

1. Harris G.L. Properties of Silicon Carbide. 13:1995;IEE Emis Datareviews. and references therein.
2. Sasaki M., Nishino Y., Nakashima S., Harima H. Materials Science Forum. 264-268:1998;41-44.
3. Zhou W.L., Pirouz P., Powell J.A. Materials Science Forum. 264-268:1998;417-420.
4. Nakashima S., Harima H. Physica Status Solidi (a). 162:1997;39-64.
5. Bourton J.C., Sun L., Pophristic M., Luckacs S.J., Long F.H., Feng Z.C., Ferguson I.T. Journal of Applied Physics. 84:1998;6268-6273.
6. Wabah Q., Ellison A., Henry A., Janzén E., Hallin C., Di Persio J., Martinez R. Applied Physics Letters. 76:2000;2725-2727.
7. A. Itoh, Proceedings of International Symposium on Power and Semiconductor Devices (1995) p. 101.
8. L. Scaltrito, S. Ferrero, S. Porro, F. Giorgis, P. Mandracci, C.F. Pirri, C. Ricciardi, G. Richieri, C. Sgorlon, L. Merlin, A. Cavallini, A. Castaldini, Materials Science Forum (2002), in press.
9. Verzellesi G., Meneghesso G., Cavallini A., Zanoni E. EE Electron Device Letters. 22:(12):2001;579-581.