Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3364-3367

  Ji, Zhenguo ^a,b   Xi, Junhua ^b   Huo, Lijuan ^b   Zhao, Yi ^b  

^a HANGZHOU DIANZI UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY OXIDES; CRITICAL PARAMETER; DC REACTIVE MAGNETRON SPUTTERING; ELECTRICAL RESISTIVITY; HALL EFFECT MEASUREMENT; OPTICAL AND ELECTRICAL PROPERTIES; ORTHORHOMBIC STRUCTURES; P-TYPE; POLYCRYSTALLINE; POST ANNEALING; POTENTIAL APPLICATIONS; TRANSMITTANCE SPECTRA; TRANSPARENT CONDUCTING FILMS; UV-VISIBLE ABSORPTION; VISIBLE REGION; X-RAY DIFFRACTION STUDIES;

ANTIMONY; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; HALL EFFECT; HOLE CONCENTRATION; MAGNETIC FIELD EFFECTS; OPTICAL PROPERTIES; OXIDE FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SEMICONDUCTOR SWITCHES; TECHNICAL PRESENTATIONS; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 71049127664     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778884     Document Type: Conference Paper

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