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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 6, 2009, Pages 1260-1265

Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition

(11) Huang, Yen Chin a Li, Zhen Yu b Weng, Li Wei a Uen, Wu Yih a Lan, Shan Ming a Liao, Sen Mao a Lin, Tai Yuan c Huang, Yu Hsiang d Chen, Jian Wen d Yang, Tsun Neng d Chiang, Chin Chen d

a CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

d INSTITUTE OF NUCLEAR ENERGY RESEARCH (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; BURSTEIN-MOSS SHIFT; DIETHYLZINC; DOPED ZNO; DOPING TECHNIQUES; FLAT SURFACES; FORMING MICROSTRUCTURE; GA DOPING; GA FILM; GA-DOPED ZNO; LINE BROADENING; LOW TEMPERATURE PHOTOLUMINESCENCE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; N-TYPE DOPANTS; PL SPECTRA; REACTANT GAS; SCANNING ELECTRON MICROSCOPY IMAGE; SI (1 1 1); SI(111) SUBSTRATE; TRIETHYL GALLIUMS; VAN DER PAUW METHOD; ZNO; ZNO FILMS;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FLOW RATE; HOLOGRAPHIC INTERFEROMETRY; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; THERMOELECTRIC EQUIPMENT; WATER VAPOR; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 71049116808 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3212895 Document Type: Article

Times cited : (11)

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