Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 8, 2009, Pages 1817-1822

  Mchedlidze, Teimuraz ^a   Wilhelm, Thomas ^b   Arguirov, Tzanimir ^c   Trushin, Maxim ^a   Reiche, Manfred ^b   Kittler, Martin ^a,c  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING PROCEDURE; CRYSTALLOGRAPHIC ORIENTATIONS; DIRECT BONDING; DISLOCATION NETWORKS; ELECTRICAL AND OPTICAL PROPERTIES; HIGH INTENSITY; LUMINESCENCE PROPERTIES; MICROSCOPIC STRUCTURES; SCREW DISLOCATIONS; SI WAFER; STRUCTURAL PECULIARITIES; TEM;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; LUMINESCENCE; MOLECULAR STRUCTURE; OPTICAL CORRELATION; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

SILICON WAFERS;

EID: 70949087936     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881462     Document Type: Conference Paper

References (23)

1. M. Kittler, X. Yu, T. Mchedlidze, T. Arguirov, O. F. Vyvenko, W. Seifert, M. Reiche, T. Wilhelm, M. Seibt, O. Voß, A. Wolff, and W. Fritzsche, Small 3, 964 (2007).
2. F. Calzecchi, P. Gondi, and F. Schintu, Nuovo Cimento 58B, 376 (1968).
3. S. Mil'shtein and V. I. Nikitenko, Phys. Tech. Semicond. 6, 1556 (1972).
4. D. M. Lee, J. B. Posthill, F. Shimura, and G. A. Rozgonyi, Appl. Phys. Lett. 53, 370 (1988).
5. S. Mil'shtein, J. Phys. 6, C6-207 (1979).
6. V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt, and W. Schröter, Appl. Phys. Lett. 84, 2106 (2004).
7. M. Reiche, K. Scheerschmidt, D. Conrad, R. Scholz, A. Pößl, U. Gösele, and K. N. Tu, Inst. Phys. Conf. Ser. 157, 447 (1997).
8. K. Ikeda, T. Sekiguchi, S. Ito, M. Takebe, and M. Suezawa, J. Cryst. Growth 210, 90 (2000).
9. T. Sekiguchi, S. Ito, and A. Kanai, Mater. Sci. Eng. B 91/92, 244 (2002).
10. T. Wilhelm, T. Mchedlidze, X. Yu, T. Arguirov, M. Kittler, and M. Reiche, Solid State Phenom. 131-133, 571 (2008).
11. S. Weiss and R. Kassing, Solid-State Electron. 31, 1733 (1988).
12. D. H. Warrington and W. Bollmann, Philos. Mag. 25, 1195 (1972).
13. F. Lu, D. Gong, H. Sun, and X. Wang, J. Appl. Phys. 77, 213 (1995).
14. N. A. Drosdov, A. A. Patrin, and V. D. Tkachev, JETP Lett. 23, 597 (1976).
15. W. Schröter, H. Hedemann, V. Kveder, and F. Riedel, J. Phys.: Condens. Matter 14, 13047 (2002).
16. T. Mchedlidze, T. Wilhelm, X. Yu, T. Arguirov, G. Jia, M. Reiche, and M. Kittler, Solid State Phenom. 131-133, 503 (2008).
17. T. Sekiguchi and K. Sumino, J. Appl. Phys. 79, 3253 (1996).
18. R. Sauer, J. Weber, J. Stoltz, E. R. Weber, K. H. Küsters, and H. Alexander, Appl. Phys. A 36, 1 (1985).
19. Yu. S. Lelikov, Yu. T. Rebane, S. Ruvimov, A. A. Sitnikova, D. V. Tarhin, and Yu. G. Shreter, Phys. Status Solidi B 172, 53 (1992).
20. V. Kveder, M. Kittler, and W. Schröter, Phys. Rev. B 63, 115208 (2001).
21. V. Kveder, M. Badylevich, W. Schröter, M. Seibt, E. Steinman, and A. Izotov, Phys. Status Solidi A 202, 901 (2005).
22. X. Yu, O. Vyvenko, M. Kittler, W. Seifert, T. Mtchedlidze, T. Arguirov, and M. Reiche, Semicond. 41, 458 (2007).
23. T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holle-man, P. LeMinh, and J. Schmitz, Solid State Phenom. 131-133, 303 (2008).