Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering

Journal of Alloys and Compounds

Volumn 489, Issue 2, 2010, Pages 519-522

  Dai, J N ^a   Han, X Y ^a   Wu, Z H ^a   Yu, C H ^a   Xiang, R F ^a   He, Q H ^a   Gao, Y H ^a   Chen, C Q ^a   Xiao, X H ^b   Peng, T C ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

Crystal growth; Semiconductor; Thin film; X ray diffraction

Indexed keywords

A-PLANE; EPITAXIAL THIN FILMS; HIGH QUALITY; LOW-DISLOCATION DENSITY; MOSAICITY; NON-POLAR; OPTIMIZED CONDITIONS; POLYCRYSTALLINE STRUCTURE; R-SAPPHIRE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; ROCKING CURVES; SEMICONDUCTOR; SEMICONDUCTOR THIN FILMS; SUBSTRATE TEMPERATURE; ZNO; ZNO FILMS; ZNO THIN FILM;

ALUMINUM; ATOMIC FORCE MICROSCOPY; CORUNDUM; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTION; DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN BOUNDARIES; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THIN FILM DEVICES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

EPITAXIAL FILMS;

EID: 70649088788     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.09.098     Document Type: Article

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