Characterization of n-n Ge/SiC heterojunction diodes

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Gammon, P M ^a   Prez Tomas A ^a,b   Jennings, M R ^a   Roberts, G J ^a   Davis, M C ^a   Shah, V A ^a   Burrows, S E ^a   Wilson, N R ^a   Covington, J A ^a   Mawby, P A ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GERMANIUM; LEAKAGE CURRENTS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE;

4H SILICON CARBIDE; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL PROPERTIES; HETEROJUNCTION DIODES; IDEALITY FACTORS; REVERSE LEAKAGE CURRENT; TURN-ON VOLTAGES;

MOLECULAR BEAM EPITAXY;

EID: 52349108819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2987421     Document Type: Article

References (13)

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