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Volumn 2001-January, Issue , 2001, Pages 1-11

Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width-scaling

Author keywords

Circuits; Electrostatic discharge

Indexed keywords

DESIGN; ELECTROSTATIC DISCHARGE; INTEGRATED CIRCUIT MANUFACTURE; NETWORKS (CIRCUITS); SEMICONDUCTOR JUNCTIONS; SILICIDES;

EID: 84948994333     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (34)

References (12)
  • 1
    • 0034542052 scopus 로고    scopus 로고
    • Wafer cost reduction through design of high performance fully silicided ESD devices
    • K. Verhaege and C. Russ. Wafer Cost Reduction through Design of High Performance Fully Silicided ESD Devices. EOS/ESD Symposium 2000, pp. 18-28
    • (2000) EOS/ESD Symposium , pp. 18-28
    • Verhaege, K.1    Russ, C.2
  • 2
    • 0000177674 scopus 로고
    • ESD protection in a 3.3v sub-micron silicided CMOS technology
    • D. Krakauer, et al. ESD Protection in a 3.3V Sub-Micron Silicided CMOS Technology. EOS/ESD Symposium 1992, pp. 250-257
    • (1992) EOS/ESD Symposium , pp. 250-257
    • Krakauer, D.1
  • 3
    • 0026817821 scopus 로고
    • ESD failure modes: Characteristics, mechanisms and process influences
    • A. Amerasekera, et al. ESD Failure Modes: Characteristics, Mechanisms and Process Influences. IEEE TED-39, 1992, p.2
    • (1992) IEEE , vol.TED-39 , pp. 2
    • Amerasekera, A.1
  • 4
    • 0032684510 scopus 로고    scopus 로고
    • The effect of silicide on ESD performance
    • G. Notermans, et al. The Effect of Silicide on ESD Performance. IRPS 1999, pp. 154-158
    • (1999) IRPS , pp. 154-158
    • Notermans, G.1
  • 5
    • 0034541828 scopus 로고    scopus 로고
    • A novel NMOS transistor for high performance ESD protection devices in a 0.18um CMOS technology utilizing salicide process
    • HB. Park, et al. A Novel NMOS Transistor for High Performance ESD Protection Devices in a 0.18um CMOS Technology Utilizing Salicide Process. EOS/ESD Symposium 2000, pp. 407-412
    • (2000) EOS/ESD Symposium , pp. 407-412
    • Park, H.B.1
  • 6
    • 0000790344 scopus 로고
    • Improving the ESD failure threshold of silicided NMOS output transistors by ensuring uniform current flow
    • T. Polgreen, et al. Improving the ESD Failure Threshold of Silicided NMOS Output Transistors by Ensuring Uniform Current Flow, EOS/ESD Symposium 1989, pp. 167-174
    • (1989) EOS/ESD Symposium , pp. 167-174
    • Polgreen, T.1
  • 7
    • 0026406199 scopus 로고
    • Non-uniform ESD current distribution due to improper metal routing
    • G. Krieger. Non-Uniform ESD Current Distribution due to Improper Metal Routing, EOS/ESD Symposium 1991, pp. 104-109
    • (1991) EOS/ESD Symposium , pp. 104-109
    • Krieger, G.1
  • 8
    • 33747060861 scopus 로고
    • Achieving uniform nMOS device power distribution for sub-micron ESD reliability
    • C. Duvvury, et al. Achieving Uniform nMOS Device Power distribution for Sub-Micron ESD Reliability, IEDM 1992, pp.131-134
    • (1992) IEDM , pp. 131-134
    • Duvvury, C.1
  • 9
    • 0001809887 scopus 로고    scopus 로고
    • Substrate pump NMOS for ESD protection application
    • C. Duvvury, et al. Substrate Pump NMOS for ESD Protection Application. EOS/ESD Symposium 2000, pp. 1828
    • (2000) EOS/ESD Symposium , pp. 1828
    • Duvvury, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.