Structural and electrical characterization of ohmic contacts to graphitized silicon carbide

Nanotechnology

Volumn 20, Issue 49, 2009, Pages

  Maneshian, Mohammad H ^a   Lin, Ming Te ^a   Diercks, David ^b   Shepherd, Nigel D ^a,b  

^a Center for Advanced Research and Technology   (United States)

^b UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; CARBON RICH; CONTACT PADS; ELECTRICAL CHARACTERIZATION; ELEMENTAL ANALYSIS; GRAPHENES; MACROSCOPIC DEFECTS; METAL CARBIDES; NEAR-SURFACE LAYERS; OHMIC BEHAVIOR; RAMAN ANALYSIS; SILICON CARBIDE SUBSTRATES; TEMPERATURE RAMP;

ELECTRIC CONTACTORS; EXCIMER LASERS; GAS LASERS; GRAPHITE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASER SURGERY; OHMIC CONTACTS; SILICON CARBIDE; TITANIUM;

METAL ANALYSIS;

GRAPHENE; METAL; SILICON; SILICON CARBIDE;

ARTICLE; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRONICS; PRIORITY JOURNAL; RAMAN SPECTROMETRY; REACTION TIME; SEMICONDUCTOR; TEMPERATURE; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70449900586     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/49/495703     Document Type: Article

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