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Volumn 20, Issue 47, 2009, Pages
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Control of channel doping concentration for enhancing the sensitivity of 'top-down' fabricated Si nanochannel FET biosensors
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BUFFER SOLUTIONS;
CHANNEL DOPINGS;
CHANNEL STRUCTURES;
CHANNEL WIDTHS;
DOPING CONCENTRATION;
HIGH SENSITIVITY;
HIGH-SENSITIVITY SENSOR;
HYDROGEN IONS;
IMMUNODETECTION;
NANO CHANNELS;
P-TYPE SILICON;
PH SENSITIVITY;
PROSTATE SPECIFIC ANTIGEN;
REPRODUCIBILITIES;
TOPDOWN;
VARIOUS PH;
BIOSENSORS;
CONCENTRATION (PROCESS);
DOPING (ADDITIVES);
FABRICATION;
FIELD EFFECT TRANSISTORS;
MESFET DEVICES;
NANOFLUIDICS;
PH SENSORS;
SILICON;
SENSITIVITY ANALYSIS;
NANOCHANNEL;
PROSTATE SPECIFIC ANTIGEN;
SILICON;
NANOMATERIAL;
ARTICLE;
BIOSENSOR;
CONTROLLED STUDY;
FIELD EFFECT TRANSISTOR;
IMMUNODETECTION;
NANOCHEMISTRY;
NANOFABRICATION;
PRIORITY JOURNAL;
REPRODUCIBILITY;
CHEMISTRY;
ELECTRICITY;
GENETIC PROCEDURES;
INSTRUMENTATION;
PH;
SEMICONDUCTOR;
SPECTROSCOPY;
TIME;
BIOSENSING TECHNIQUES;
ELECTRICITY;
HYDROGEN-ION CONCENTRATION;
NANOSTRUCTURES;
SILICON;
SPECTRUM ANALYSIS;
TIME FACTORS;
TRANSISTORS, ELECTRONIC;
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EID: 70449738525
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/47/475501 Document Type: Article |
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Times cited : (14)
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References (17)
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