Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 83-86

  Salem, B ^a   Dhalluin, F ^a   Baron, T ^a   Jamgotchian, H ^b   Bedu, F ^b   Dallaporta, H ^b   Gentile, P ^a   Pauc, N ^a   den Hertog, M I ^a   Rouviere, J L ^a   Ferret, P ^c  

^a CEA GRENOBLE   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c CEA LETI   (France)

Author keywords

Electrical characterisation; Silicon nanowire

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; MICROELECTRODES; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON; SILICON OXIDES;

CHEMICAL VAPOUR DEPOSITION; ELECTRICAL CHARACTERIZATION; GROWTH CHARACTERIZATION; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTRINSIC SILICON NANOWIRES; NUCLEATION CATALYSTS; SILICON NANOWIRE; UNDOPED SILICON; VAPOR-LIQUID-SOLID MECHANISM; VAPOUR-LIQUID-SOLID MECHANISMS;

NANOWIRES;

EID: 67349085472     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.011     Document Type: Article

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