Electrical detection of VEGFs for cancer diagnoses using anti-vascular endotherial growth factor aptamer-modified Si nanowire FETs

Biosensors and Bioelectronics

Volumn 24, Issue 6, 2009, Pages 1801-1805

  Lee, Hyun Seung ^a   Kim, Ki Su ^a   Kim, Cheol Joo ^a   Hahn, Sei Kwang ^a   Jo, Moon Ho ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Aptamer sensors; RNA aptamer; Si nanowire field effect transistor; Vascular endotherial growth factor

Indexed keywords

APTAMER SENSORS; APTAMERS; CANCER DIAGNOSIS; COVALENT IMMOBILIZATION; DETECTION LIMITS; ELECTRICAL DETECTION; GROWTH FACTOR; HIGH QUALITY; LABEL FREE; P-TYPE; RNA APTAMER; SI NANOWIRE; SI NANOWIRE FIELD-EFFECT TRANSISTOR; SINGLE-CRYSTALLINE; SURFACE-MODIFIED; VASCULAR ENDOTHERIAL GROWTH FACTOR;

BIOACTIVITY; BIOSENSORS; ELECTRIC WIRE; GATE DIELECTRICS; GATES (TRANSISTOR); LABELS; MESFET DEVICES; NANOWIRES; NUCLEIC ACIDS; PEPTIDES; RNA; SENSORS; SILICON;

FIELD EFFECT TRANSISTORS;

APTAMER; NANOWIRE; SILICON; VASCULOTROPIN;

ARTICLE; BIOSENSOR; CANCER DIAGNOSIS; CONTROLLED STUDY; DIAGNOSTIC VALUE; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTOR; MOLECULAR RECOGNITION; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY;

APTAMERS, PEPTIDE; BIOSENSING TECHNIQUES; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IMMUNOASSAY; NANOTECHNOLOGY; NANOTUBES; NEOPLASM PROTEINS; NEOPLASMS; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; SILICON; TRANSISTORS, ELECTRONIC; TUMOR MARKERS, BIOLOGICAL; VASCULAR ENDOTHELIAL GROWTH FACTOR A;

EID: 67649168061     PISSN: 09565663     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.bios.2008.08.036     Document Type: Article

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