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Applied Physics Letters

Volumn 95, Issue 19, 2009, Pages

Spin-polarized tunneling in fully epitaxial magnetic tunnel diodes with a narrow-gap In1-x Mnx As electrode

(3) Saito, H a,b Yuasa, S a Ando, K a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNELS; METAL/INSULATOR/SEMICONDUCTOR STRUCTURES; SPIN DEPENDENT TUNNELING; SPIN-POLARIZED TUNNELING; TUNNELING MAGNETORESISTANCE;

BIPOLAR TRANSISTORS; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TUNNEL DIODES; TUNNELING (EXCAVATION); WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 70449706283 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3264962 Document Type: Article

Times cited : (2)

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