Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 10, 2002, Pages 1004081-1004084

  Chun, S H ^a   Potashnik, S J ^a   Ku, K C ^a   Schiffer, P ^a   Samarth, N ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; ARSENIC DERIVATIVE; FERROMAGNETIC MATERIAL; GALLIUM; MANGANESE DERIVATIVE;

ARTICLE; CONDUCTANCE; ELECTRIC RESISTANCE; LOW TEMPERATURE PROCEDURES; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; SEMICONDUCTOR;

EID: 0036752346     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.100408     Document Type: Article

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