High tunneling magnetoresistance in Fe/GaOx/Ga 1-xMnx As with metal/insulator/semiconductor structure

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Saito, H ^a,b   Yamamoto, A ^a   Yuasa, S ^a   Ando, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; MIS DEVICES; SWITCHING CIRCUITS; TUNNEL DIODES; TUNNELS;

BARRIER MATERIALS; FERROMAGNETIC METALS; MAGNETIC TUNNELS; METAL/INSULATOR/SEMICONDUCTOR STRUCTURES; SEMI-CONDUCTORS; TMR DEVICES; TUNNELING MAGNETORESISTANCES;

MANGANESE ALLOYS;

EID: 55149098991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013327     Document Type: Article

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