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Volumn 100, Issue 5, 2006, Pages

Negative magnetoresistance in metal/oxide/lnMnAs tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRODES; FERROMAGNETIC MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; TUNNEL JUNCTIONS;

EID: 33748869472     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337399     Document Type: Article
Times cited : (4)

References (29)
  • 12
    • 33748872745 scopus 로고    scopus 로고
    • note
    • 4 in a PlasmaLab μP system. The power was 150 W and the chamber pressure was 25 mTorr.
  • 14
    • 33748878638 scopus 로고    scopus 로고
    • P. T. Chiu and B. W. Wessels (unpublished)
    • P. T. Chiu and B. W. Wessels (unpublished).
  • 20
    • 33748881455 scopus 로고    scopus 로고
    • note
    • The InMnAs film was confirmed to be ferromagnetic by SQUID magnetometry. The interlayer coupling was not observed as the magnetic signal from a Ni layer is much greater than that of a thin InMnAs layer, which prohibits measuring the magnetization of the InMnAs layer in the tunnel junction structure.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.