Novel valuable fluorine free copper(I) precursors for copper chemical vapor deposition

Polyhedron

Volumn 28, Issue 18, 2009, Pages 4091-4095

  Tran, Phong Dinh ^a   Allavena Valette, Audrey ^b   Kamous, Farah ^a   Doppelt, Pascal ^a  

^a UNIVERSITÉ PARIS 13   (France)

^b CNRS Université Paris Est Créteil Val de Marne   (France)

Author keywords

Bis(trimethylsilyl)acetylene; Copper thin films; Diketonate

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER COMPOUNDS; FILM PREPARATION; FLUORINE; KETONES; LIGHTING;

ACID-BASE REACTIONS; BIS(TRIMETHYLSILYL)ACETYLENE; CHEMICAL VAPOUR DEPOSITION; COPPER THIN FILM; FLUORINE-FREE; PHYSICOCHEMICAL PROPERTY; SIMPLE++; TRIMETHYLSILYL; Β-DIKETONATE; Β-DIKETONES;

ACETYLENE;

EID: 70449678725     PISSN: 02775387     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.poly.2009.09.029     Document Type: Article

References (23)

1. Murarka S.P., and Hymes S.W. Crit. Rev. Solid State Mater. Sci. 20 (1995) 87
2. Merchant S.M. Electrochem. Soc. Proc. 99-31 (1999) 91
3. Rosenberg R., Edelstein D.C., Hu C., and Rodbell K.P. Annu. Rev. Mater. Sci. 30 (2000) 229
4. In: Kodas T.T., and Hampden-Smith M.J. (Eds). The Chemistry of Metal CVD (1994), VCH Publishers, New York and references there in
5. Doppelt P. Coord. Chem. Rev. 178-180 (1998) 1785 and references there in
6. Coyle J.P., Monillas W.H., Yap G.P.A., and Barry S.T. Inorg. Chem. 47 (2008) 683
7. Norman J.A.T., Perez M., Schulz S.E., and Waechtler T. Microelectr. Eng. 85 (2008) 2159
8. Jakob A., Shen Y., Wachtler T., Schulz S.E., Gressner T., Riedel R., Fasel C., and Lang H. Z. Anorg. Allg. Chem. 634 (2008) 2226
9. Li Z., Rahtu A., and Gordon R.G. J. Electrochem. Soc. 153 (2006) C787
10. Wang L., and Griffin G.L. J. Electrochem. Soc. 153 (2006) C137
11. Park K.H., and Marshall W.J. J. Am. Chem. Soc. 127 (2005) 9330
12. Chi Y., Hsu P.F., Liu C.S., Ching W.L., Chou T.Y., Carty A.J., Peng S.M., Lee G.H., and Chuang S.H. J. Mater. Chem. 12 (2002) 3541
13. Goswami J., Devi A., Shivashankar S.A., Lakshmi R., and Chandrasekaran S. J. Mater. Chem. 13 (1998) 687
14. Norman J.A.T. J. Phys. IV C2 263 (1991) 1
15. Joulaud M., Angekort C., Doppelt P., Mourier T., and Mayer D. Microelectr. Eng. 64 (2002) 107
16. Chen T.Y., Vaissermann J., Ruiz E., Sénateur J.P., and Doppelt P. Chem. Mater. 13 (2001) 3993
17. Donnelly V.M., and Gross M.E. J. Vac. Sci. Technol. A 11 (1993) 66
18. Tran P.D., and Doppelt P. Surf. Coat. Technol. 201 (2007) 9066
19. S.M. Cramp, N.J. Geach, US Patent 6642418 B1, 2003.
20. Doppelt P., and Baum T.H. J. Organomet. Chem. 517 (1996) 53
21. Tran P.D., and Doppelt P. J. Electrochem. Soc. 154 (2007) D520
22. Choi E.S., Park S.K., Shin H.K., and Lee H.H. Appl. Phys. Lett. 68 (1996) 1017
23. Niskanen A., Hatanpaa T., Ritala M., and Leskela M. J. Therm. Anal. Calc. 64 (2001) 995