Evaluation of a novel fluorine free copper (I) precursor for Cu CVD

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9066-9070

  Tran, Phong Dinh ^a   Doppelt, Pascal ^a  

^a UMR 7182 CNRS Université Paris XII Val de Marne   (France)

Author keywords

Chemical vapor deposition; Copper (I) precursor; Copper thin film; Fluorine free precursor

Indexed keywords

COPPER; GROWTH RATE; METALLIC FILMS; SYNTHESIS (CHEMICAL); TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ACID-BASE REACTION; COPPER THIN FILM; VOLATILE FLUORINE FREE COPPER;

CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION; COPPER; GROWTH RATE; METALLIC FILMS; SYNTHESIS (CHEMICAL); TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34547651363     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.03.049     Document Type: Article

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