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Volumn 85, Issue 10, 2008, Pages 2159-2163
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New precursors for CVD copper metallization
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Author keywords
Copper CVD; Seed layers; TSV
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Indexed keywords
AGGLOMERATION;
ASPECT RATIO;
ATOMIC LAYER DEPOSITION;
CHEMICAL VAPOR DEPOSITION;
COPPER PLATING;
ELECTROPLATING;
FILM GROWTH;
FORMIC ACID;
GAS PERMEABLE MEMBRANES;
HYDROSTATIC PRESSURE;
METALLIC FILMS;
METALLIZING;
NITRIDES;
NONMETALS;
OPTICAL DESIGN;
OPTICAL INTERCONNECTS;
ORGANIC ACIDS;
PHOTORESISTS;
RUTHENIUM;
SILICON;
SILICON WAFERS;
TANTALUM;
TANTALUM COMPOUNDS;
THERMAL EVAPORATION;
THERMODYNAMIC STABILITY;
TITANIUM;
TITANIUM COMPOUNDS;
TITANIUM NITRIDE;
TRANSITION METALS;
VAPOR PRESSURE;
VAPORS;
COPPER CVD;
COPPER ELECTROPLATING;
COPPER FILMS;
COPPER INTERCONNECTS;
COPPER METALLIZATION;
CYCLE TIMES;
DEEP PENETRATION;
EVAPORATION TEMPERATURES;
HIGH ASPECT RATIO;
HIGH GROWTH RATES;
HIGH-PURITY;
LOW-TEMPERATURE CVD;
ONE STEP;
PRECURSOR VAPOR;
REDUCING GASES;
SEED LAYERS;
TANTALUM NITRIDE;
THERMAL STABILITY;
THROUGH SILICON VIA;
TSV;
COPPER;
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EID: 52149102506
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2008.05.036 Document Type: Article |
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Times cited : (28)
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References (9)
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