Theoretical study on InxGa1-xN/Si hetero-junction solar cells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7409, Issue , 2009, Pages

  Li, Jiangong ^a   Li, Fubin ^a   Lin, Shuo ^a   Zhong, Shuiku ^a   Wei, Yiming ^a   Men, Xianghai ^a   Shen, Xiaoming ^a  

^a GUANGXI UNIVERSITY   (China)

Author keywords

Hetero junction; Ingan; Simulation; Solar cell

Indexed keywords

HOMOJUNCTION; IV CHARACTERISTICS; SINGLE JUNCTION; THEORETICAL STUDY;

CELLS; CONVERSION EFFICIENCY; THIN FILM DEVICES; THIN FILMS;

SOLAR CELLS;

EID: 70449629398     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.826088     Document Type: Conference Paper

References (19)

1. Yamaguchi, M., "III-V compound multi-junction solar cells: present and future, " Sol. Energy Mater. Sol. Cells 75, 261-269 (2003).
2. Hamzaoui, H., Bouazzi, A. S. and Rezig, B., "Theoretical possibilities of InxGa1-xN tandem PV structures, " Sol. Energy Mater. Sol. Cells 87, 595-603 (2005).
3. Neff, H., Semchinova, O., Lima, A., Filimonov, A., Holzhueter, G., "Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge(0*lt;x<0.6) heterojunction solar cells, " Sol. Energy Mater. Sol. Cells 90, 982-997(2006).
4. Wen, B. et al., "Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells, " Chinese Journal of Semiconductors (in Chinese) 28, 1392-1395 (2007).
5. Zhang, X. B. et al., "Simulation of In0.65Ga0.35N single-junction solar cells, " J. Phys. D: Appl. Phys. 40, 7335-7338 (2007).
6. Shen, X. M. et al, "Simulation of the InGaN-based tandem solar cells", Proc of SPIE 7405, 70450E (2008).
7. Hsu, L., and Walukiewicz, W., "Modeling of InGaN/Si tandem solar cells" J. Appl. Phys. 104, 024507 (2008).
8. Jani, O.et al., "Design and characterization of GaN/InGaN solar cells, " Appl. Phys. Lett. 91, 132117 (2007).
9. Neufeld, C. J., Toledo, N. G., Cruz, S. C., Iza, M., Denbaars, S. P., and Mishra, U. K., "High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap, " Appl. Phys. Lett. 93, 143502 (2008).
10. Daha, R., Pantha, B., Li, J., Lin, J. Y., and Jiang, H. X., "InGaN/GaN multiple quantum well solar cells with long operating wavelengths, " Appl. Phys. Lett. 94, 063505 (2009).
11. Wu, J., Walukiewicz, W., Yu, K. M., Ager III, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y. and Nanishi, Y., "Unusual properties of the fundamental band gap of InN, " Appl. Phys. Lett. 80, 3967-3969 (2002).
12. Matsuoka, T. et al., "Optical bandgap energy of wurtize InN, " Appl. Phys. Lett. 81, 1246-1248 (2002).
13. Wu, J., Walukiewicz, W., Yu, K. M., Ager III, J. W. et al., "Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system, " J. Appl. Phys. 94(10), 6477-6482 (2003).
14. Marti, A., Tablero, C., Antolin, E., Luque, A., Campion, R. P., Novikov, S.V., Foxon, C.T., "Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells, " Solar Energy Mater. Solar Cells 93, 641-644 (2009).
15. Fonash, S. et al., http://www.cneu.psu.edu/amps/.
16. Levinshtein, M. E., Rumyantsev, S. L. and Shur, M. S., [Properties of Advanced Semiconductor Materials], Wiley, Chichester, UK, 1-90 (2001).
17. Li, N., "Simulation and Analysis of GaN-based Photoelectronic Devices, " Dissertation (in Chinese), Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 3(2005).
18. Mnatsakanov, T. T., Levinshtein, M. E., Pomortseva, L. I., Yurkov, S. N., Simin, G. S. and Asif Khan, M., "Carrier mobility model for GaN, " Solid-State Electron. 47, 111-115 (2003).
19. Ager III, J. W. et al., "Electrical properties of InGaN-Si heterojunctions, " Phys. Status Solidi C 6(S2), S413-S416 (2009).