Photovoltaic properties and technological aspects of In1- xGaxN/Si, Ge (0 (5) Neff, H a Semchinova, O K b Lima, A M N a Filimonov, A c Holzhueter, G d a FEDERAL UNIVERSITY OF CAMPINA GRANDE (Brazil) b Cynoron IT GmbH (Germany) c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation) d UNIVERSITY OF ROSTOCK (Germany)

Solar Energy Materials and Solar Cells

Volumn 90, Issue 7-8, 2006, Pages 982-997

Author keywords

III V compounds; Nitrides; Performance analysis; Solar cell; Structural properties; Thin film technology

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; NITRIDES; PHOTOLUMINESCENCE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

III-V COMPOUNDS; PERFORMANCE ANALYSIS; STRUCTURAL PROPERTIES; THIN FILM TECHNOLOGY;

SOLAR CELLS;

EID: 33344475435     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2005.06.002     Document Type: Article

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