Simulation of the InGaN-based tandem solar cells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7045, Issue , 2008, Pages

  Shen, Xiaoming ^a   Lin, Shuo ^a   Li, Fubin ^a   Wei, Yiming ^a   Zhong, Shuiku ^a   Wan, Haibin ^a   Li, Jiangong ^a  

^a GUANGXI UNIVERSITY   (China)

Author keywords

InGaN; Simulation; Solar cell; Tandem

Indexed keywords

CELLS; ELECTRIC FIELDS; GALLIUM; PHOTOELECTRIC CELLS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

BAND GAPS; HIGH EFFICIENCIES; INGAN; SIMULATION; SINGLE JUNCTIONS; TANDEM; TANDEM SOLAR CELLS; THEORETICAL CALCULATIONS; TRIPLE JUNCTIONS;

CYTOLOGY;

EID: 56249134893     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793997     Document Type: Conference Paper

References (15)

1. Yamaguchi, M., "III-V compound multi-junction solar cells: present and future," Sol. Energy Mater. Sol. Cells 75, 261-269 (2003).
2. Wu, J., Walukiewicz, W., Yu, K. M., Ager III, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y. and Nanishi, Y., "Unusual properties of the fundamental band gap of InN," Appl. Phys. Lett. 80, 3967-3969 (2002).
3. Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., Kurimoto, E., "Optical bandgap energy of wurtize InN," Appl. Phys. Lett. 81, 1246-1248 (2002).
4. Wen, B. et al., "Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells," Chinese Journal of Semiconductors (in Chinese) 28, 1392-1395 (2007).
5. Jani, O., Ferguson, I., Honsberg, C., Kurtz, S., "Design and characterization of GaN/InGaN solar cells," Appl. Phys. Lett. 91, 132117 (2007).
6. 0.35N single-junction solar cells," J. of Phys. D: Appl. Phys. 40, 7335-7338 (2007).
7. 1-xN tandem PV structures," Sol. Energy Mater. Sol. Cells 87, 595-603 (2005).
8. Levinshtein, M. E., Rumyantsev, S. L. and Shur, M. S., [Properties of Advanced Semiconductor Materials], Wiley, Chichester, UK, 1-90 (2001).
9. Li, N., "Simulation and Analysis of GaN-based Photoelectronic Devices," Dissertation (in Chinese), Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 3(2005).
10. Mnatsakanov, T. T., Levinshtein, M. E., Pomortseva, L. I.,Yurkov, S. N., Simin, G. S. and Asif Khan, M., "Carrier mobility model for GaN" Solid-State Electron. 47, 111-115 (2003).
11. Aleksiejūnas, R. et al., "Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique" Phys. Status Solidi (c) 0, 2686 (2003).
12. Dingle, R., Sell, D. D., Stokowski, S. E., Dean, P. J. and Zetterstrom, B., "Absorption, Reflectance, and Luminescence of GaN Single Crystals," Phys. Rev. B 3, 497-500 (1971).
13. Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager III, J. W., Haller, E. E., Lu, H. and Schaff, W. J., "Effects of the narrow band gap on the properties of InN," Phys. Rev. B 66, 201403-1 (2002).
14. Marti, A., Araújo, G. L., "Limiting efficiencies for photovoltaic energy conversion in multigap systems," Solar Energy Mater. Solar Cells 43, 203-222 (1996).
15. Fonash, S. et al., http://www.cneu.psu.edu/amps/.