Erratum to "MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si" [J. Cryst. Growth 310 (2008) 1010-1014] (DOI:10.1016/j.jcrysgro.2007.11.131);MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 1010-1014

  Black, Kate ^a   Jones, Anthony C ^a,b   Chalker, Paul R ^a   Gaskell, Jeffrey M ^a   Murray, Robert T ^a   Joyce, Tim B ^a   Rushworth, Simon A ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

Author keywords

A1. Compliant layers; A1. Metalorganic chemical vapour deposition; B1. Gallium nitride; B1. Zinc oxide

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SILICON; ZINC OXIDE;

CARBON CONTAMINATION; COMPLIANT LAYERS; RANDOM AZIMUTHAL DISTRIBUTION; ZINC-TETRAHYDROFURAN;

THIN FILMS;

EID: 39249084132     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.028     Document Type: Erratum

References (22)

1. Duan X., Huang Y., Cui Y., Wang J., and Lieber C.M. Nature 409 (2001) 66
2. Liang S., Sheng H., Lin Y., Hio Z., Lu Y., and Shen H. J. Crystal Growth 225 (2001) 110
3. Golego N., Studenkin S.A., and Cocivera M. J. Electrochem. Soc. 147 (2000) 1592
4. Emanetoglu N.W., Gorla C., Liu Y., Liang S., and Lu Y. Mater. Sci. Semicond. Process. 2 (1999) 247
5. Hamdani F., Yeadon M., Smith D.J., Tang H., Kim W., Salvador A., Botchkarev A.E., Gibson J.M., Polyakov A.Y., Skowronski M., and Morkoç H. J. Appl. Phys. 83 (1998) 983
6. Gu X., Reschikov M.A., Teke A., Johnstone D., Morkoç H., Nemeth B., and Nause J. Appl. Phys. Lett. 84 (2004) 2268
7. Luo X.H., Wang R.M., Zhang X.P., Zhang H.Z., Yu D.P., and Luo M.C. Micron 35 (2004) 475
8. Ehrke U., Sears A., Alff L., and Reisinger D. Appl. Surf. Sci. 231-232 (2004) 598
9. Hata T., Minamikawa T., Morimoto O., and Hada T. J. Crystal Growth 47 (1979) 171
10. Barnes J.O., Leary D.J., and Gordon A.G. J. Electrochem. Soc. 7 (1980) 1636
11. Aronovich J., Oritiz A., and Bube R.H. J. Vac. Sci. Technol. 16 (1979) 994
12. Lane P.A., Wright P.J., Crosbie M.J., Pitt A.D., Reeves C.L., Cockayne B., Jones A.C., and Leedham T.J. J. Crystal Growth 192 (1998) 423
13. Auld J., Houlton D.J., Jones A.C., Rushworth S.A., Malik M.A., O'Brien P., and Critchlow G.W. J. Mater. Chem. 4 (1994) 1249
14. Kern W., and Heim R.C. J. Electrochem. Soc. 117 (1970) 562
15. Smith F.T.J. Appl. Phys. Lett. 43 (1983) 1108
16. Lau C.K., Tiku S.K., and Lakin K.M. J. Electrochem. Soc. 127 (1980) 1843
17. Solanki R., and Collins G.J. Appl. Phys. Lett. 42 (1983) 662
18. Moss R.H. J. Crystal Growth 68 (1984) 78
19. Jones A.C. Semicond. Sci. Technol. 6 (1991) A36
20. Potter R.J., Chalker P.R., Manning T.D., Aspinall H.C., Loo Y.F., Jones A.C., Smith L.M., Critchlow G.W., and Schumacher M. Chem. Vap. Deposit. 11 (2005) 159
21. Li Q., Kumar V., Li Y., Zhang H., Marks T.J., and Chang R.P. Chem. Mater. 17 (2005) 1001
22. Hellman E.S. Alternative oxide substrates for GaN heteroepitaxy. In: Edgar J.H., Strite S., Akasaki I., Amano H., and Wetzel C. (Eds). Gallium Nitride and Related Semiconductors (1999), INSPEC, London 396