Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 149-153

  Engel Herbert, Roman ^a   Jalan, Bharat ^a   Cagnon, Joël ^a   Stemmer, Susanne ^a  

^a University of California   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B1. Titanium compounds; B2. Dielectric materials

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; B1. OXIDES; B1. TITANIUM COMPOUNDS; B2. DIELECTRIC MATERIALS; EPITAXIAL ORIENTATIONS; GROWTH CONDITIONS; HIGH DENSITY; LOW OXYGEN; OXYGEN FLUXES; OXYGEN OCTAHEDRA; PLANE SAPPHIRE; RUTILE FILMS; RUTILE STRUCTURE; RUTILE TIO; SURFACE FEATURE; TWIN FORMATION;

CORUNDUM; CRYSTAL GROWTH; EPITAXIAL FILMS; EPITAXIAL GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR OXYGEN; OXIDE MINERALS; SAPPHIRE; SEMICONDUCTOR QUANTUM WIRES; SURFACES; TITANIUM; TITANIUM NITRIDE; TITANIUM OXIDES; TRANSITION METAL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 70449480804     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.005     Document Type: Article

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