High-resolution transmission electron microscopy study of defects and interfaces in epitaxial TiO2 films on sapphire and LaAlO3

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 82, Issue 4, 2002, Pages 735-749

  Huang, J Y ^a   Park, B H ^a   Jan, David ^a,b   Pan, J Q ^b   Zhu, Yuntian T ^a   Jia, Q X ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; COMPUTER SIMULATION; DEFECTS; EPITAXIAL GROWTH; IMAGE ANALYSIS; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; PHASE TRANSITIONS; PULSED LASER DEPOSITION; SAPPHIRE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH MECHANISMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IMAGE SIMULATIONS; TWIN BOUNDARY; TWINNING DIRECTION;

TITANIUM DIOXIDE;

EID: 0037051430     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610208243199     Document Type: Article

References (17)

1. Ashbee, K. H. G., and Smallman, R. E., 1963a, J. Am. Ceram. Soc., 46, 211; 1963b, Proc. R. Soc. A, 274, 195.
2. Burgess, D. R., Morris Hotsenpiller, P. A., Anderson, T. J., and Hohman, J. L., 1996, J. Crystal Growth, 166, 763.
3. Chang, H. L. M., You, EE, Guo, J., and Lam, D. J., 1991, Appl. Surf. Sci., 48-49, 12.
4. Fukushima, K., Takaoka, G. H., and Yamada, I., 1993, Jap. J. appl. Phys., 32, 3561.
5. Gao, Y., Merkle, K. L., Chang, FI. L., Zhang, T. J., and Lam, D. J., 1992, Phil. Mag. A, 65, 1103.
6. Geller, S., and Bala, V. B., 1956, Acta crystallogr., 9, 1019.
7. Ghoshtagoe, R. N., and Noreika, A. J., 1970, J. electrochem. Soc., 117, 1310.
8. Kumashiro, Y., Kinoshita, Y., Takaoka, Y., and Murasawa M, 1993, J. Ceram. Soc. Japan, 101, 514.
9. Lee, W.-Y., Bristowe, P.D., Gao, Y., and Merkle, K. L., 1993, Phil. Mag. Lett., 68, 309.
10. Mitsuhashi, T., and Kleppa, U. J., 1979, J. Am. Ceram. Soc., 62, 356.
11. Morris Hotsenpiller, P. A., Wilson, G. A., Roshko, A., Rothman, J.B., and Rohrer, G. S., 1996, J. Cryst, Growth, 166, 779.
12. Navrosky, A., and Kleppa, O. J., 1967, J. Am. Ceram. Soc., 50, 626.
13. Pan, X. Q., and Fu, L., 2001, J. appl. Phys., 89, 6048.
14. Post, J. E., and Burnham, C. W., 1986, Am. Mineral., 71, 142.
15. Suzuki, K., Ichihara, M., and Takeuchi, C., 1991, Phil. Mag. A, 63, 657.
16. Zhang, H. Z., and Banfield, J. F., 1998, J. Mater. Chem., 8, 2076; 2000, J. phys. Chem. B, 104, 3481.
17. Zheng, J. G., Pan, X. Q., Schweizer, M., Zhou, F., Weimar, U., Gopel, W., and Rehle, M., 1996, J. appl. Phys., 79, 7688.