Reflective multilayer optics for 6.7 nm wavelength radiation sources and next generation lithography

Thin Solid Films

Volumn 518, Issue 5, 2009, Pages 1365-1368

  Tsarfati, T ^a   van de Kruijs, R W E ^a   Zoethout, E ^a   Louis, E ^a   Bijkerk, F ^a,b  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

GIXR; Lithography; Multilayer; TEM; X FEL; XPS

Indexed keywords

EUV LITHOGRAPHY; FREE ELECTRON; GIXR; GRAZING INCIDENCE X-RAY REFLECTOMETRY; INTERFACE PASSIVATION; INTERLAYER FORMATION; MULTILAYER OPTICS; NEXT GENERATION LITHOGRAPHY; NORMAL INCIDENCE; OPTICAL CONTRAST; REFLECTIVITY BANDWIDTH; TEM; WAVELENGTH RADIATION; X-FEL; XPS; XPS ANALYSIS;

CHEMICAL REACTIVITY; FREE ELECTRON LASERS; LASERS; LITHOGRAPHY; PASSIVATION; QUANTUM OPTICS; REFLECTION; WAVEMETERS; X RAY PHOTOELECTRON SPECTROSCOPY;

MULTILAYERS;

EID: 70449479041     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.073     Document Type: Article

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