Chemically mediated diffusion of d -metals and B through Si and agglomeration at Si-on-Mo interfaces

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Tsarfati, Tim ^a   Zoethout, Erwin ^a   Van De Kruijs, Robbert ^a   Bijkerk, Fred ^a,b  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYER; CHEMICAL DIFFUSION; CROSS SECTION; ENERGY DISPERSIVE X-RAY; HIGH-ANGLE ANNULAR DARK FIELDS; INTERLAYER FORMATION; MO/SI MULTILAYER; MULTILAYER OPTICS; SI LAYER; SURFACE FREE ENERGY; THIN LAYERS;

AGGLOMERATION; AUGER ELECTRON SPECTROSCOPY; BORIDES; DIFFUSION IN SOLIDS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; MOLYBDENUM; MULTILAYERS; SCANNING ELECTRON MICROSCOPY; SILICIDES; SILICON; SURFACE DIFFUSION; SURFACE SEGREGATION; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 66549084461     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126497     Document Type: Article

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