Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance-voltage measurements

Journal of Physics D: Applied Physics

Volumn 37, Issue 20, 2004, Pages 2814-2818

  Huang, Y ^a   Chen, X D ^a   Fung, S ^a   Beling, C D ^a   Ling, C C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; PHONONS; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE MEASUREMENTS; DOPING CONCENTRATION; EPITAXIAL LAYERS;

GALLIUM NITRIDE;

EID: 7044286421     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/20/007     Document Type: Article

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