Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 114-117

  Morita, Daisuke ^a   Sano, Masahiko ^a   Yamamoto, Masashi ^a   Nonaka, Mitsuhiro ^a   Yasutomo, Katsuhiro ^a   Akaishi, Kazuyuki ^a   Nagahama, Shin Ichi ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ELECTRIC CURRENTS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET DEVICES;

EMISSION EFFICIENCY; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0346885872     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303395     Document Type: Article

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